Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-13
2009-10-27
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C438S696000, C438S692000, C257SE21577
Reexamination Certificate
active
07608536
ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device, in which a high-temperature SOD (spin on dielectric) annealing process is performed to prevent a SOD crack, and a nitride film, serving as a capping layer, is formed over the entire surface of a bit line pattern to prevent a tungsten layer, which is a bit line electrode layer, from being oxidized during the high-temperature annealing process.In a process of forming the bit line pattern, over etching is performed to recess a lower interlayer insulating film such that the thickness of the interlayer insulating film to be etched in a subsequent process, that is, a process of etching a storage node contact hole, is reduced. In this way, it is possible to prevent the storage node contact hole from not being opened.
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Lee Jung Seock
Sung Hyun Suk
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Fourson George
Hynix / Semiconductor Inc.
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