Method of manufacturing compound semiconductor integrated circui

Details Method of manufacturing compound semiconductor integrated circui Method of manufacturing compound semiconductor integrated circui

1995-12-01

2000-09-12

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

H01L 2136

Patent

active

061177539

ABSTRACT:
A method of manufacturing a compound semiconductor integrated circuit having a portion at which compound semiconductor layers having different compositions from each other are continuously formed on a semiconductor substrate in a lateral direction includes the following steps. A substrate surface subjected to epitaxial growth is kept at partially different temperatures. Selective epitaxial growth is performed by vapor phase growth in this state to form the compound semiconductor layers having different compositions from each other. The surface structures forming the integrated circuit are created by lithography for localizing heating or cooling during growth of epitaxial layers.

REFERENCES:
Copy of the Official Communication.
Iga, et al., Applied physics Letters 64 Feb. 21, 1994, Lateral band-gap control of InGaAsP multiple quantam wells by laser-assisted metalorganic molecular beam epitaxy for a multiwavelength laser array, pp. 983-985.
Sasaki, et al., Electronics and Communcations in Japan Part II: Electronics 76 Apr. 1993, No. 4, Selective MOVPE Growth and Its Application to Semiconductor Photonic Integrated Circuits, pp. 1-11.
S.K. Ghandi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, Chapter 8 (no month available), 1994.
Kirihara et al, OQD-90-61 printed by The Institute of Electrical Engineers of Japan (1993) K.C.
Kato et al., Electronics Letters vol. 28 (1992), p. 153.

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