Method of manufacturing complementary metal oxide...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S906000, C510S175000

Reexamination Certificate

active

07964495

ABSTRACT:
A method of manufacturing a CMOS image sensor manufacturing includes forming a plurality of metal pads over a semiconductor substrate; electrically connecting the metal pads to lower conductive film patterns of multi-layer metal wires using metal contacts; depositing an insulation film over the metal pads; patterning the insulation film to expose at least a portion of the upper surface of the metal pads; and removing impurities from an uppermost surface of the metal pads.

REFERENCES:
patent: 5240554 (1993-08-01), Hori et al.
patent: 6136767 (2000-10-01), Hineman et al.
patent: 6660564 (2003-12-01), Brady
patent: 1020000002332 (2000-01-01), None
patent: 1020040079614 (2004-09-01), None

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