Method of manufacturing CMOS image sensor

Details Method of manufacturing CMOS image sensor Method of manufacturing CMOS image sensor

2007-11-30

2010-02-09

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S075000, C438S301000, C438S531000

Reexamination Certificate

active

07659186

ABSTRACT:
A method for manufacturing the CMOS image sensor comprising forming an epitaxial layer provided with a plurality of photo diodes on a semiconductor substrate, coating a first photo resist on the epitaxial layer and performing a patterning process on the first photo resist using a predetermined reference value in order to form a first photo resist pattern, coating a second photo resist on the epitaxial layer and first photo resist pattern and performing a patterning process for the second photo resist in order to form the second photo resist pattern on the first photo resist pattern; and forming a well area of a pixel area by performing a dopant implantation process using a mask pattern including the first photo resist pattern and the second photo resist pattern.

REFERENCES:
patent: 6416933 (2002-07-01), Singh et al.
patent: 6653058 (2003-11-01), Vahedi et al.
patent: 6946400 (2005-09-01), Chung
patent: 7183205 (2007-02-01), Hong
patent: 7491343 (2009-02-01), Adams et al.

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