Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2008-10-16
2010-12-14
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S109000, C438S612000, C438S613000, C257S777000, C257SE29169, C257SE23142
Reexamination Certificate
active
07851256
ABSTRACT:
Provided is a method of fabricating a chip-on-chip (COC) semiconductor device. The method of fabricating a chip-on-chip (COC) semiconductor device may include preparing a first semiconductor device with a metal wiring having at least one discontinuous spot formed therein, preparing a second semiconductor device with at least one bump formed on a surface of the second semiconductor device corresponding to the at least one discontinuous spot, aligning the first semiconductor device onto the second semiconductor device, and connecting the at least one bump of the second semiconductor device to the at least one discontinuous spot formed in the metal wiring of the first semiconductor device.
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Baek Seung-duk
Chung Hyun-soo
Hwang Seong-deok
Kang Sun-won
Lee Dong-ho
Fan Michele
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Smith Matthew S
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