Method of manufacturing charge-coupled device having different l

Details Method of manufacturing charge-coupled device having different l Method of manufacturing charge-coupled device having different l

1998-02-03

2000-04-25

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Charge transfer device

438146, H01L 21339

Patent

active

060543418

ABSTRACT:
A charge-coupled device includes a first P-type well formed in an N-type semiconductor substrate, a second P-type well formed repeatedly the first P-type well region, a charge-transfer region (BCCD) formed within the second P-type well region, an N-type photodiode region (PDN) formed in the upper portion of the first P-type well so as to be isolated from the charge-transfer region, a first high concentration P-type photodiode region (first PDP.sup.+ region) formed in the upper surface of the N-type photodiode region excluding the charge-transfer region and serving as a charge-isolating layer, first and second poly-gates formed repeatedly on the charge-transfer region, and a second high concentration self aligned P-type photodiode region (second PDP.sup.+ region) formed in the surface of the first high concentration P-type photodiode region. The charge-isolating region is thin to extend the potential pocket of each light-conversion PDN region.

REFERENCES:
patent: 5181093 (1993-01-01), Kawaura
patent: 5424775 (1995-06-01), Kamisaka et al.
patent: 5514887 (1996-05-01), Hokari
patent: 5619049 (1997-04-01), Kim
patent: 5828091 (1998-10-01), Kawai
patent: 5844264 (1998-12-01), Shinji

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