Method of manufacturing carbon nanotube semiconductor device

Details Method of manufacturing carbon nanotube semiconductor device Method of manufacturing carbon nanotube semiconductor device

2006-08-29

2006-08-29

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S779000, C428S408000

Reexamination Certificate

active

07098151

ABSTRACT:
Provided is a method of controlling an alignment direction of CNTs in manufacturing a carbon nanotube semiconductor device using the CNTs for a channel region formed between a source electrode and a drain electrode. In manufacturing a carbon nanotube semiconductor device including a gate electrode, a gate insulating film, a source electrode, a drain electrode, a CNT layer formed between the source electrode and the drain electrode in contact therewith, the method conducts: dropping a CNT solution obtained by dispersing CNTs in a solvent onto a region between the source electrode and the drain electrode while an alternating current voltage is applied between the source electrode and the drain electrode; and removing the solvent to control an orientation of the CNTs in the CNT layer.

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A. Bachtold et al.; “Contacting Carbon Nanotubes Selectively with Low-Ohmic Contacts for Four-Probe Electric Measurements”; Appl. Phys. Lett., Jul. 13, 1998; vol. 73, No. 2, pp. 274-276.
S. Frank et al.; “Carbon Nanotube Quantum Resistors”; Science, Jun. 12, 1998; vol. 280, pp. 1744-1746.
M. Bockrath et al.; “Single-Electron Transport in Ropes of Carbon Nanotubes”; Science, Mar. 28, 1997, vol. 275, pp. 1922-1925.
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Nakayama et al., “Microprocess for Fabricating Carbon-Nanotube Probes of a Scanning Probe Microscope” J. Vac. Sci. Technol. B 18/(2), pp. 661-664.
R. Martel et al.; “Single and Multi-Well Carbon Nanotube Field-Effect Transistor”; Appl. Phys. Lett., Oct. 26, 1998, vol. 73, No. 17; pp. 2447-2449.
K. Liu et al.; “Conductance Spikes in Single-Walled Carbon Nanotube Field-Effect”; Appl. Phys. Lett., Oct. 18, 1999; vol. 75, No. 16; pp. 2494-2496.
T. Yamada; “Analysis of Submicron Carbon Nanotube Field-Effect Transistor”; Appl. Phys. Lett., Jan. 31, 2000; vol. 76, No. 5; pp. 628-630.
A. Bachtold et al.; “Contacting Carbon Nanotubes Selectively with Low-Ohmic Contacts for Four-Probe Electric Measurements”; Appl. Phys. Lett., Jul. 13, 1998., Jul. 13, 1998; vol. 73, No. 2, pp. 274-276.
S. Frank et al.; “Carbon Nanotube Quantum Resistors”; Science, Jun. 12, 1998; vol. 280, pp. 1744-1746.
M. Bockrath et al.; “Single-Electron Transport in Ropes of Carbon Nanotubes”; Science, Mar. 28, 1997, vol. 275, pp. 1922-1925.
“Carbon Nanotube -Progressing Material Development Technique and Development of Application -(with a partial translation)”; Apr. 26, 2002; pp. 157-158.

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