Method of manufacturing by etching a semiconductor substrate...

Details Method of manufacturing by etching a semiconductor substrate... Method of manufacturing by etching a semiconductor substrate...

2011-05-24

2011-05-24

Brewster, William M (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S016000, C438S057000, C438S542000, C438S703000, C257SE21090, C257SE21135, C257SE21521, C257S190000

Reexamination Certificate

active

07947576

ABSTRACT:
An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.

REFERENCES:
patent: 2004/0203243 (2004-10-01), Keller
patent: 2007/0290228 (2007-12-01), Yoshida
patent: 2008/0206947 (2008-08-01), Suzuki
patent: 2009/0020156 (2009-01-01), Ohtsuka et al.
patent: 2009/0203156 (2009-08-01), Starzynski
patent: 2010/0109120 (2010-05-01), Fucsko et al.
patent: 2006-135321 (2006-05-01), None
patent: 2007-042806 (2007-02-01), None
patent: 2007-042857 (2007-02-01), None
patent: 2007-214260 (2007-08-01), None

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