Method of manufacturing buried contact in SRAM

Details Method of manufacturing buried contact in SRAM Method of manufacturing buried contact in SRAM

1998-11-04

2000-11-21

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438683, H01L 2144

Patent

active

061502677

ABSTRACT:
A method of manufacturing buried contact window in SRAM includes implanting oxygen ions into a substrate inside a buried contact window region adjacent to the location for forming a source/drain region, and then carrying out oxidative reaction in the implanted region to form an silicon oxide layer using the heat generated by a subsequent polysilicon deposition process or a laser beam. The silicon oxide layer protects the substrate by acting as a buffer, thus preventing the substrate from being over-etched to form a deep trench. Consequently, contact resistance between the buried contact window and the source/drain region is lowered, and leakage current at the junction is prevented.

REFERENCES:
patent: 5525552 (1996-06-01), Huang
patent: 5652152 (1997-07-01), Pan et al.
patent: 5728615 (1998-03-01), Cheng et al.
patent: 5751043 (1998-05-01), You
patent: 5894151 (1999-04-01), Yamazaki et al.

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