Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2004-11-19
2008-08-05
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S029000, C438S032000, C257SE21002
Reexamination Certificate
active
07407889
ABSTRACT:
The present invention improves a method of forming a surface unevenness using a difference in etching rates, and relaxes limitations on substrates in this method. In a method of the present invention, an uneven surface is formed by a method including applying pressure to a predetermined region in a surface of a thin film formed on a substrate, and etching a region including at least a portion of the predetermined region and at least a portion of the reminder of the surface that excludes the predetermined region. An etching rate difference within the thin film increases freedom in selecting a substrate material.
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Hidaka Takeshi
Hijino Masamichi
Kasai Hiroaki
Koyama Akihiro
Koyo Hirotaka
Hamre Schumann Mueller & Larson P.C.
Nippon Sheet Glass Company Limited
Novacek Christy L
Olympus Corporation
Smith Zandra
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