Method of manufacturing article having uneven surface

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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Details

C438S029000, C438S032000, C257SE21002

Reexamination Certificate

active

07407889

ABSTRACT:
The present invention improves a method of forming a surface unevenness using a difference in etching rates, and relaxes limitations on substrates in this method. In a method of the present invention, an uneven surface is formed by a method including applying pressure to a predetermined region in a surface of a thin film formed on a substrate, and etching a region including at least a portion of the predetermined region and at least a portion of the reminder of the surface that excludes the predetermined region. An etching rate difference within the thin film increases freedom in selecting a substrate material.

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patent: 2002/0058463 (2002-05-01), Kurachi et al.
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patent: 6-80443 (1994-03-01), None
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patent: 2001-272505 (2001-10-01), None
patent: 2002-160943 (2002-06-01), None
patent: 2003-73145 (2003-03-01), None

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