Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-08-23
2011-08-23
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S083000, C257S059000, C349S042000, C349S141000
Reexamination Certificate
active
08003451
ABSTRACT:
The embodiment of the invention discloses an exemplary method, in which a gate line, a gate electrode, and a pixel electrode are formed in a first step; a multilayer structure is formed on the gate line and the gate electrode in a second step; and a data line and source/drain electrodes are formed in a third step.
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Beijing Boe Optoelectronics Technology Co., Ltd.
Ladas & Parry LLP
Nguyen Ha Tran T
Pathak Shantanu C
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