Method of manufacturing array substrate of liquid crystal...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C257S083000, C257S059000, C349S042000, C349S141000

Reexamination Certificate

active

08003451

ABSTRACT:
The embodiment of the invention discloses an exemplary method, in which a gate line, a gate electrode, and a pixel electrode are formed in a first step; a multilayer structure is formed on the gate line and the gate electrode in a second step; and a data line and source/drain electrodes are formed in a third step.

REFERENCES:
patent: 2002/0009835 (2002-01-01), Chen et al.
patent: 2005/0046762 (2005-03-01), Kim et al.
patent: 2005/0110931 (2005-05-01), Yoo et al.
patent: 2006/0138417 (2006-06-01), Ahn et al.
patent: 2006/0138429 (2006-06-01), Heo
patent: 2006/0139504 (2006-06-01), Ahn et al.
patent: 2006/0139549 (2006-06-01), Ahn et al.
patent: 2007/0153151 (2007-07-01), Yang
patent: 2007/0205422 (2007-09-01), Ahn et al.
patent: 2008/0014665 (2008-01-01), Kim
patent: 1782828 (2006-06-01), None

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