Method of manufacturing apertured aluminum oxide substrates

Details Method of manufacturing apertured aluminum oxide substrates Method of manufacturing apertured aluminum oxide substrates

1976-12-30

1978-01-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576E, 29576T, 148175, 156644, 156645, 156656, 156657, 156662, 156667, 156613, 156DIG61, 156DIG73, 427 95, 427255, H01L 21205

Patent

active

040690946

ABSTRACT:
A method for making an apertured aluminum oxide substrate by selectively masking a sapphire wafer, depositing aluminum oxide adjacent the wafer and the mask, and removing the aluminum oxide deposited adjacent the mask and the mask, whereby an aperture is formed in the aluminum oxide. A composite is thus formed of an insulating substrate of monocrystalline sapphire with an insulating epitaxial layer of aluminum oxide apposed thereto, the epitaxial layer having an aperture therein which may be filled with an island of epitaxial silicon.

REFERENCES:
patent: 3272670 (1966-09-01), Myers
patent: 3496037 (1970-02-01), Jackson et al.
patent: 3661676 (1972-05-01), Wong et al.
patent: 3698947 (1972-10-01), Kemlage et al.
patent: 3740280 (1973-06-01), Ronen
patent: 3766637 (1973-10-01), Norris et al.
patent: 3861968 (1975-01-01), Magdo et al.
patent: 3878005 (1975-04-01), Warren et al.

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