Method of manufacturing an X-ray exposure mask and device for co

Details Method of manufacturing an X-ray exposure mask and device for co Method of manufacturing an X-ray exposure mask and device for co

1990-03-16

1993-02-23

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 1566591, 430 5, 378 35, G03F 900

Patent

active

051887061

ABSTRACT:
An X-ray mask can be manufactured by forming an X-ray transmitting thin film on a mask support, forming an X-ray absorber thin film on the X-ray transmitting thin film, and patterning the X-ray absorber thin film with a desired pattern to form an X-ray absorber pattern. Prior to the patterning, at least one inert element with an atomic number greater than that of neon is ion-implanted in the X-ray absorber thin film.

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Microelectronic Engineering, vol. 5, 1986, pp. 51-59, I. Plotnik, et al., "Ion-Implant Compensation of Tensile Stress in Tungsten Absorber for Low Distortion X-Ray Masks".
Journal of Vacuum Science & Technology; Part B, vol. 6, No. 1, Jan./Feb. 1988, pp. 174-177, Toshihiko Kanayama, et al., "Reduction in X-Ray Mask Distortion Using Amorphous WN.sub.x Absorber Stress Compensated with Ion Bombardment".
Patent Abstracts of Japan, vol. 10, No. 272 (E-437) [2328], Sep. 16, 1986, & JP-A-61-095573, May 14, 1986, Todatoshi Nozaki, "Formation of Gate Electrode Thin Film".
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Solid State Technology, vol. 30, No. 9, Sep. 1987, pp. 151-156, Marcos Karnezos, "X-Ray Mask Distortions".

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