Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1993-02-17
1994-12-13
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
4272552, 4272551, 4272481, 427314, 427 79, C23C 1600
Patent
active
053728505
ABSTRACT:
In a process for manufacturing an oxide-system dielectric thin film using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms by the CVD method. A vapor of organic solvent having a boiling point less than 100.degree. C. contacts to the raw material compound at least in one of processes for vaporizing or transporting said raw material compound. The raw material compound of oxide-system dielectric thin film can be vaporized stably and transported to the reactor at a low temperature than before. Therefore, a composition can be controlled homogeneously and an oxide-system dielectric thin film having a good performance can be manufactured.
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Feil et al, "Organometallic chemical vapor deposition of strontium titanate thin films", MRS (Boston, Mass.) Nov. 29-Dec. 1, 1989, pp. 375-379.
Zhao et al, "Organometallic chemical vapor deposition of high Tc superconducting films using a volatile, fluorocarbon-based precursor", Appl. Phys. Lett. 53(18) Oct. 1988, pp. 1750-1752.
"Physiochemical Properties of Metalorganic Compounds for MOCVD of Dielectric Substance (I), Pb(DPM).sub.2 " 52nd Applied Physics Association Seminar, 1990, preliminary report No. 9a-P-11, Nimura, et al.
"Preparation of Pb(Zr,Ti)O.sub.3 Thin Film by MOCVD", The 39th Spring Meeting, 1992, The Japan Society of Applied Physics and Related Societies, Extended Abstracts, No. 30a-ZW-6, Miki, et al.
Higaki Takashi
Honda Toshihisa
Kinouchi Shin-ichi
Kuroiwa Takeharu
Matsuno Shigeru
King Roy V.
Mitsubishi Denki & Kabushiki Kaisha
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