Method of manufacturing an integrated capacitor and device obtai

Details Method of manufacturing an integrated capacitor and device obtai Method of manufacturing an integrated capacitor and device obtai

1983-03-28

1984-11-06

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430314, 430317, 357 51, 204 58, 29570, G03C 500

Patent

active

044812833

ABSTRACT:
A method of manufacturing integrated capacitors in a semiconductor body coated with a multilayer wiring network constituted by two patterns which are separated by insulating layers, in which method on a first insulating layer is deposited a metal layer from which a dense layer is formed by anodic oxidation, which layer is then subjected to a photo-etching treatment in order to form a dielectric of a capacitor, whose plates consist of parts of a second conductor pattern.

REFERENCES:
patent: 3739239 (1973-06-01), Kerr
patent: 3839164 (1974-10-01), Hurst
patent: 3864817 (1975-02-01), Lapham, Jr. et al.
Alcorn et al., NASA Tech. Briefs, Spring 1981, p. 104.

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