Method of manufacturing an electronic device

Details Method of manufacturing an electronic device Method of manufacturing an electronic device

2006-06-27

2006-06-27

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S643000, C438S653000, C438S637000, C438S674000, C438S678000, C438S648000, C438S694000

Reexamination Certificate

active

07067424

ABSTRACT:
The present invention provides for a method of providing copper metallization on a semiconductor body, including the step of depositing copper in a nitrogen-containing atmosphere so as to form a nitrogen-containing copper seed layer and forming the copper metallization on the seed layer, and also including the step of heating the seed layer so as to release the nitrogen to form part of a barrier layer separating the seed layer from the semiconductor body.

REFERENCES:
patent: 6242349 (2001-06-01), Nogami et al.
patent: 6268291 (2001-07-01), Andricacos et al.
patent: 6368961 (2002-04-01), Lopatin et al.
patent: 6440854 (2002-08-01), Rozbicki
patent: 6554914 (2003-04-01), Rozbicki et al.
patent: 6955986 (2005-10-01), Li
patent: 2001/0051420 (2001-12-01), Besser et al.

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