Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-21
2000-01-11
Speer, Timothy
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438421, H01L 21764
Patent
active
060135735
ABSTRACT:
An air bridge type structure of a bridge shape which joins to a substrate or micro-structure is manufactured by forming an air bridge type structure on a first substrate and transferring the air bridge type structure to a second substrate and/or a micro-structure formed on the second substrate. A mold substrate, comprising a recessed portion provided on the surface of the mold substrate and a peeling layer formed on the recessed portion, is used for formation of the air bridge type structure. A micro-structure can be supported by the air bridge type structure, for example, a probe for detecting tunneling current or micro-force, supported by the air bridge type structure. Accordingly, electrical connection between structures and the substrate or between the structures one to another can be performed, even if there is undercutting underneath the structures. Film stress generated upon formation of air bridge type structures can be avoided, and increasing of productivity and lowering of costs can be simultaneously achieved.
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Canon Kabushiki Kaisha
Speer Timothy
Stein Stephen
LandOfFree
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