Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-08-18
2010-02-16
Everhart, Caridad M (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45001
Reexamination Certificate
active
07663136
ABSTRACT:
Example embodiments relate to a method of manufacturing amorphous NiO thin films and nonvolatile memory devices including amorphous thin films that use a resistance material. Other example embodiments relate to a method of manufacturing amorphous NiO thin films having improved switching and resistance characteristics by reducing a leakage current and non-volatile memory devices using an amorphous NiO thin film. Provided is a method of manufacturing an amorphous NiO thin film having improved switching behavior by reducing leakage current and improving resistance characteristics. The method may include preparing a substrate in a vacuum chamber, preparing a nickel precursor material, preparing a source gas by vaporizing the nickel precursor material, preparing a reaction gas, preparing a purge gas and forming a monolayer NiO thin film on the substrate by performing one cycle of sequentially supplying the source gas, the purge gas, the reaction gas and the purge gas into the vacuum chamber.
REFERENCES:
patent: 6124158 (2000-09-01), Dautartas et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 7196955 (2007-03-01), Nickel
patent: 2004/0135184 (2004-07-01), Motoyoshi
patent: 2005/0103269 (2005-05-01), Sneh
patent: 2005/0201173 (2005-09-01), Sharma et al.
patent: 2006/0207503 (2006-09-01), Meneghini et al.
patent: 2007/0277735 (2007-12-01), Mokhlesi et al.
M. Ultriainen, et al. “Studies of NiO Thin Film Formation by Atomic Layer Epitaxy”, Elsevier Materials Science & Engineering B54, dD(1998(, pp. 98-103.
H. Kumagai et al “Preparation and characteristics of nickel oxide thin film by controlled growth with sequential surface chemical reactions”, Journal of Materials Science Letters vol. 15, (1996), pp. 1081-1083.
Cha Young-Kwan
Koo June-Mo
Lee Myoung-Jae
Park Sung-Ho
Seo Bum-Seok
Everhart Caridad M
Harness Dickey & Pierce PLC
Samsung Electronics Co,. Ltd.
LandOfFree
Method of manufacturing amorphous NiO thin films and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing amorphous NiO thin films and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing amorphous NiO thin films and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4200599