Method of manufacturing aluminum gate electrode

Details Method of manufacturing aluminum gate electrode Method of manufacturing aluminum gate electrode

1999-03-04

2000-08-29

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438584, H01L 2100

Patent

active

061107689

ABSTRACT:
A method of manufacturing a method of manufacturing a thin film transistor. An aluminum gate electrode is formed on a substrate. A protective layer is formed on the top surface and the sidewall of the aluminum gate electrode. A gate dielectric layer is formed on the substrate and the protective layer. An intrinsic amorphous-silicon thin film is formed on the gate dielectric layer. A heavily doped amorphous-silicon thin film is formed on the intrinsic amorphous-silicon thin film. A patterned source/drain conductive layer is formed on the heavily doped amorphous-silicon thin film to expose a portion of the heavily doped amorphous-silicon thin film. The portion of the heavily doped amorphous-silicon thin film exposed by the patterned source/drain conductive layer is removed to expose a portion of the intrinsic amorphous-silicon thin film.

REFERENCES:
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 6028011 (2000-02-01), Takase et al.
H. Sirringhaus, Self-Passivated Copper Gates for Amorphous Silicon TFTs, (IEEE), pp. 388-390, 1997.

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