Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-05-07
2000-10-10
Thomas, Tom
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438411, 438421, 438422, 438611, 438626, 438631, 438634, 438738, 438739, 438740, 257522, H01L 214763, H01L 21764
Patent
active
061301515
ABSTRACT:
A method for forming a semiconductor device having air regions, the method comprises providing a base, forming a pattern of metal leads, depositing a layer of oxide over the metal leads, forming a layer of nitride over said layer of oxide, opening and etching a trench down to the base layer of material, and depositing and planarizing a dielectric layer. An alternate approach teaches the deposition of a layer of SOG over the layer of oxide that has been deposited over the metal leads, planarizing this layer of SOG down to the top of the metal leads, depositing a layer of PECVD oxide, patterning and etching this layer of PECVD oxide thereby creating openings that are in between the metal leads. The SOG that is between the metal leads can be removed thereby creating air gaps as the intra-level dielectric for the metal leads.
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Chang Juin-Jie
Chen Yen-Ming
Huang Kuei-Wu
Lin Shih-Chi
Ackerman Stephen B.
Saile George O.
Souw Bernard E.
Taiwan Semiconductor Manufacturing Company
Thomas Tom
LandOfFree
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