Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-12-14
1999-03-30
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438786, H01L 2184
Patent
active
058888551
ABSTRACT:
The present invention has a semiconductor device including a substrate made of an insulating material, a gate electrode formed on the substrate, a thin film made of a silicon semiconductor and formed on the gate electrode through a gate insulating film, a protective film formed on the thin film and having two opposing major surfaces, and a source electrode and a drain electrode formed to be electrically connected with the thin film, wherein the first major surface of the two major surfaces of the protective film is in contact with the thin film, and a region near the second major surface of the protective film contains oxygen. The present invention has a method of manufacturing a semiconductor device, in which a gate electrode is on a substrate made of an insulating material, a thin film made of a silicon semiconductor is formed on the gate electrode through a gate insulating film, a protective film having two opposing major surfaces in which a first major surface is in contact with the thin film and a region near a second major surface contains oxygen is formed on the thin film, and a source electrode and a drain electrode are formed to electrically connect with the thin film.
REFERENCES:
patent: 5091337 (1992-02-01), Watanabe et al.
patent: 5258333 (1993-11-01), Shappir et al.
Translation of JP 6-132536, May 1994.
T.-S. Jen et al., Jpn.J.Appl.Phys., 33(7B)(1994) L 977, "Effects of N2O-Plasma treatment of SiON/ SiN gate insulators on . . . TFTs", Jul. 1994.
Dohi Takayoshi
Kamimura Takaaki
Matumura Kunio
Nagahisa Nobuya
Chaudhari Chandra
Kabushiki Kaisha Toshiba
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