Method of manufacturing a WN contact plug

Details Method of manufacturing a WN contact plug Method of manufacturing a WN contact plug

2005-07-19

2005-07-19

Wilson, Christian (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S685000

Reexamination Certificate

active

06919268

ABSTRACT:
WF6is used as a source gas of tungsten, and NH3is used as a source gas of nitrogen. The partial pressure of WF6is set to be higher than that of NH3. The substrate temperature is set to about 400° C. to 450° C. Tungsten nitride is deposited and then heated, to form a contact plug (106).

REFERENCES:
patent: 5487923 (1996-01-01), Min et al.
patent: 6133150 (2000-10-01), Nakajima et al.
patent: 6559050 (2003-05-01), McKee et al.
patent: 2002/0006739 (2002-01-01), Yamamoto
patent: 62-188268 (1987-08-01), None
patent: 11-102877 (1999-04-01), None
patent: 2000-188401 (2000-07-01), None

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