Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-01-24
2006-01-24
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000
Reexamination Certificate
active
06989329
ABSTRACT:
A multilayer wiring substrate which is high in connection reliability is provided through process steps of forming more than one opening, such as a via-hole in a dielectric layer laminated on a substrate, and then applying uniform copper plating to a surface portion of the dielectric layer including the opening to thereby form a wiring layer. An electroless copper plating solution with at least one of mandelonitrile and triethyltetramine mixed therein is used to perform the intended electroless copper plating. An alternative process makes use of an electroless copper plating solution with chosen additives or “admixtures” containing at least on of mandelonitrile and triethyltetramine plus eriochrome block T along with at least one of 2,2′-bipyridyl, 1,10-phenanthroline, and 2,9-dimethyl-1,10-phenanthroline
REFERENCES:
patent: 3645749 (1972-02-01), Paunovic
patent: 3928663 (1975-12-01), Redmond et al.
patent: 4099974 (1978-07-01), Morishita et al.
patent: 6290825 (2001-09-01), Fu
patent: 6326559 (2001-12-01), Yoshioka et al.
patent: 0 964 610 (1999-12-01), None
patent: 1 194 024 (2002-04-01), None
patent: 52 017334 (1977-02-01), None
patent: 52-17335 (1977-02-01), None
patent: 52-20339 (1977-02-01), None
patent: 52-85936 (1977-07-01), None
patent: 56-105468 (1981-08-01), None
patent: 11214828 (1999-08-01), None
Akahoshi Haruo
Iida Tadashi
Itabashi Takeyuki
Nishimura Naoki
Takai Eiji
Antonelli, Terry Stout and Kraus, LLP.
Hitachi , Ltd.
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