Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-02-28
1998-12-08
Dutton, Brian
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438952, H01L 214763
Patent
active
058468781
ABSTRACT:
In a method of building up wiring with a protective insulator film as a mask, a precise and elaborate wiring pattern is formed. The method comprises a process of making up a conductive material film on the surface of a semiconductor substrate, a process of depositing a inorganic insulator film consisting of a semiconductor oxide film and a semiconductor nitride film in layers on the conductive material film, a process of making up an antireflection film for an irradiation light for sensitizing used in photo lithography which patterns photosensitivity resist film, a process of making up the photosensitivity resist film on the antireflection film to pattern in a predetermined shape, and a process of applying dry etching to the conductive material film and the antireflection film with the inorganic insulator film as a mask.
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Dutton Brian
NEC Corporation
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