Method of manufacturing a wafer

Details Method of manufacturing a wafer Method of manufacturing a wafer

2006-11-21

2006-11-21

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C117S002000

Reexamination Certificate

active

07138325

ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor wafer that includes providing a substrate of a single crystalline first material that has an unfinished or rough surface, and epitaxially growing at least one layer of a second material directly on the unfinished or rough surface of the first material. The second material has a lattice that is different from that of the first material and the epitaxial growing of the second material is advantageously performed before a final surface finishing step on the unfinished or rough surface of the substrate to increase bonding between the materials.

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