Method of manufacturing a wafer

Details Method of manufacturing a wafer Method of manufacturing a wafer

2005-04-12

2005-04-12

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000, C451S029000, C451S041000

Reexamination Certificate

active

06878630

ABSTRACT:
A method of manufacturing a wafer. The surface of a wafer for which a lapping process is completed is exposed to a caustic etch process so that the etch rate against the surface of the wafer ranges from about 0.3 to about 0.7 μm/min using an etchant containing from about 42 to about 48% KOH and from about 52 to about 58% H2O. Then, a wafer back side polishing process is controlled in order to prevent a sliding phenomenon without a drop in a chucking voltage. Therefore, a lift-off or peeling phenomenon of a subsequently deposited film is reduced and local variations in the etch rate is also reduced.

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