Method of manufacturing a vertical junction field effect...

Details Method of manufacturing a vertical junction field effect... Method of manufacturing a vertical junction field effect...

2007-10-09

2007-10-09

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S138000, C257SE29313

Reexamination Certificate

active

11071454

ABSTRACT:
A vertical junction field effect transistor includes a trench formed in an epitaxial layer. The trench surrounds a channel region of the epitaxial layer. The channel region may have a graded or uniform dopant concentration profile. An epitaxial gate structure is formed within the trench by epitaxial regrowth. The epitaxial gate structure may include separate first and second epitaxial gate layers, and may have either a graded or uniform dopant concentration profile.

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Phelps, Dopant ion implantation simulations in 4H-Silicon Carbide, Sep. 16, 2004, Modeling Simul. Mater. Sci. Eng. 12 (2004) 1139-1146.
J.H. Zhao, K. Tone, X. Li, P. Alexandrov, L. Fursin, and M. Weiner; 6A, 1kV 4H-SiC Normally-off Trenched-and-Implanted Vertical JFETs.

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