Semiconductor device manufacturing: process – Electron emitter manufacture
Patent
1997-09-08
1999-09-14
Niebling, John F.
Semiconductor device manufacturing: process
Electron emitter manufacture
445 24, 445 50, H01L 20100
Patent
active
059535806
ABSTRACT:
A method of manufacturing a vacuum device utilizing a sputtering process is disclosed. According to the present invention, the vacuum device includes a silicon substrate. An emission electrode having a sharp ended tip is formed by etching the silicon substrate. An insulating layer is formed on the silicon substrate so as to make the entire structure of the emission electrode to be exposed, with the emission electrode being surrounded by the insulating layer. A gate electrode is then formed adjacent to the sharp ended tip of the emission electrode. According to the present invention, it has advantages that the emission electrode is manufactured by forming the silicon pillar using the isotropic etching and anisotropic etching and the gate electrode can be easily formed adjacent to the emission electrode by using the sputtering method after the gate insulating layer is formed. Further, the distance between the emission electrode and the gate electrode may be easily adjusted, and the vacuum device may be operated with the desired voltage by controlling the distance between the emission electrode and the gate electrode of the vacuum device.
REFERENCES:
patent: 5150192 (1992-09-01), Greene et al.
patent: 5228877 (1993-07-01), Allaway et al.
patent: 5481156 (1996-01-01), Lee et al.
patent: 5483118 (1996-01-01), Nakamoto et al.
patent: 5576594 (1996-11-01), Toyoda et al.
patent: 5643032 (1997-07-01), Cheng et al.
patent: 5749762 (1998-05-01), Nakamoto et al.
patent: 5827099 (1995-12-01), Spindt et al.
Cho Kyoung Ik
Kang Sung Weon
Lee Jin Ho
Yoo Hyung Joun
Electronics and Telecommunications Research Institute
Hack Jonathan
Niebling John F.
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