Method of manufacturing a trench transistor having a heavy...

Details Method of manufacturing a trench transistor having a heavy... Method of manufacturing a trench transistor having a heavy...

2010-04-07

2011-10-25

Ha, Nathan (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29262

Reexamination Certificate

active

08044463

ABSTRACT:
A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

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