Method of manufacturing a transistor of a semiconductor device

Details Method of manufacturing a transistor of a semiconductor device Method of manufacturing a transistor of a semiconductor device

2006-12-22

2009-08-18

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

C438S578000, C438S259000, C438S270000, C438S589000, C257S330000, C257SE21205, C257SE21438

Reexamination Certificate

active

07575989

ABSTRACT:
A method of manufacturing a transistor in which gate resistance is lowered and short channel effects are controlled by forming a trench-type gate. The threshold voltage can also be more tightly controlled.

REFERENCES:
patent: 5962894 (1999-10-01), Gardner et al.
patent: 6500743 (2002-12-01), Lopatin et al.
patent: 6979634 (2005-12-01), Suzuki
patent: 2004/0132236 (2004-07-01), Doris et al.
patent: 1183638 (1998-06-01), None
patent: 1226752 (1999-08-01), None
patent: 1269608 (2000-10-01), None
patent: 2000-049335 (2000-02-01), None

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