Method of manufacturing a transistor in a semiconductor device

Details Method of manufacturing a transistor in a semiconductor device Method of manufacturing a transistor in a semiconductor device

2005-02-01

2005-02-01

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S585000, C438S305000, C438S302000, C438S289000

Reexamination Certificate

active

06849532

ABSTRACT:
The present invention relates to a method of manufacturing a transistor in a semiconductor device. In order to increase an upper area of a gate electrode in which a silicide layer will be formed, an upper portion of the gate electrode consisting of the polysilicon layer is formed to be wider than a lower portion while maintaining the channel length. Therefore, a sheet resistance characteristic of the silicide layer and the uniformity of the sheet resistance can be improved to this improve an electrical characteristic of a device.

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