Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-09
2011-08-09
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S631000, C438S667000, C438S672000
Reexamination Certificate
active
07994048
ABSTRACT:
A through electrode that offers excellent performance and can be manufactured through a simple process is to be provided. In a silicon spacer including a silicon substrate, an insulative thick film is provided so as to be in contact with a surface of the silicon substrate and a side wall of a through hole penetrating the silicon substrate. An upper surface of a through plug is retreated to a lower level than an interface between the silicon substrate and the insulative thick film, thus to define a height gap. A first bump is then formed, which is connected to the retreated surface of the through plug and has a larger diameter than that of the through plug at the upper surface of the insulative thick film.
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Landau Matthew C
Mitchell James M
Renesas Electronics Corporation
Young & Thompson
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