Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-10-29
2000-02-01
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438258, 438266, 438660, 438662, 438257, H01L 2100, H01L 2184
Patent
active
060202238
ABSTRACT:
A method of producing an improved thin film transistor structure is provided having no source/gate or drain/gate overlap. A laser-assisted doping technique is applied to fabricate such transistors. A radiation filter is employed, which is transparent to light at the photolithography wavelength, but reflective or opaque at the laser wavelength. Eliminating source/gate and drain/gate overlap significantly reduces or eliminates parasitic capacitance and feed-through voltage between source and gate. Short-channel a-Si:H thin film transistors may be obtained having high field effect mobilities. Improved pixel performance and pixel-to-pixel uniformity is provided.
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Boyce James B.
Chua Christopher L.
Hack Michael G.
Lujan René A.
Mei Ping
Chen Kent M
Hack Jonathan
Niebling John F.
Small Jonathan A
Xerox Corporation
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