Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-03-22
2005-03-22
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S030000
Reexamination Certificate
active
06869833
ABSTRACT:
A method for fabricating a TFT having the steps of providing a substrate; sequentially depositing a transparent conductive layer, a first metal layer, a first insulating layer, a semiconductor layer, and a second metal layer on the substrate; performing a first photo-etching-process (PEP) to remove portions of the deposited layers to form a source electrode and a drain electrode and define a channel region, the first PEP includes a first halftone photolithograph process; depositing a second insulating layer and performing a second PEP to form a plurality of contact holes; and depositing a third metal layer and performing a third PEP to remove portions of the third metal layer.
REFERENCES:
patent: 5340758 (1994-08-01), Wei et al.
patent: 5874326 (1999-02-01), Lyu
patent: 5998230 (1999-12-01), Gee-Sung et al.
patent: 6448117 (2002-09-01), Jen et al.
patent: 6469769 (2002-10-01), Ozaki
patent: 6620719 (2003-09-01), Andry et al.
patent: 20020019082 (2002-02-01), Wong
Hsu Winston
Malsawma Lex H.
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