Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-08-30
2008-12-02
Menz, Douglas M. (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S034000, C438S151000, C257S072000, C257S059000, C257SE21414, C349S043000
Reexamination Certificate
active
07459323
ABSTRACT:
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode and a pair of redundant electrodes on the first and the second portions of the lower conductive film, respectively, the redundant electrodes exposing a part of the second portion of the lower conductive film; removing the exposed part of the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.
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Baek Bum-Ki
Choi Kwon-Young
Jeon Sang-Jin
Kwak Sang-Ki
Lee Han-Ju
Cantor & Colburn LLP
Fulk Steven J.
Menz Douglas M.
Samsung Electronics Co,. Ltd.
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