Method of manufacturing a thin film transistor array panel

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S780000, C257SE21411, C257SE21414, C257SE27111

Reexamination Certificate

active

07425479

ABSTRACT:
The present invention provides a thin film transistor array panel comprising: an insulating substrate; a first signal line formed on the insulating substrate and extending in a first direction; a second signal line formed on the insulating substrate, extending in a second direction, and intersecting the first signal line; a thin film transistor connected to the first and second signal lines; a passivation layer formed on the second signal line and having a contact hole exposing a portion of the second signal line; and a pixel electrode formed on the passivation layer and connected to the thin film transistor through the contact hole, wherein the passivation layer is formed by coating an organic solution that includes an organic insulating material and a solvent including at least one of PGMEP, EEP, and nBA.

REFERENCES:
patent: 6130379 (2000-10-01), Shiotsuka et al.
patent: 6162745 (2000-12-01), Ito et al.
patent: 2003/0086046 (2003-05-01), You

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