Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2006-07-18
2006-07-18
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S486000, C438S166000, C438S164000, C438S795000
Reexamination Certificate
active
07078322
ABSTRACT:
A method of manufacturing a semiconductor device characterized by its high-speed operation and high reliability is provided in which a semiconductor layer crystallized by a CW laser is used for an active layer of a TFT. When a semiconductor layer is crystallized by a CW laser, one part is formed of large crystal grains whereas another part is formed of microcrystals due to the width-wise energy density distribution. The former exhibits excellent electric characteristics. The latter has poor electric characteristics because grain boundaries hinder movement of electric charges, and therefore causes inconveniences when used as an active layer of a transistor. Accordingly, circuits are arranged such that a semiconductor layer formed of large crystal grains is used for the active layer of every TFT.
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Nakajima Kazuya
Tanada Yoshifumi
Costellia Jeffrey L.
Nixon Paebody LLP
Novacek Christy
Semiconductor Energy Laboratory Co,. Ltd.
Zarabian Amir
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