Method of manufacturing a superjunction device

Details Method of manufacturing a superjunction device Method of manufacturing a superjunction device

2006-05-12

2008-08-12

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S184000, C438S426000, C438S424000, C438S700000, C438S389000, C257SE21231, C257SE21572, C257SE21023

Reexamination Certificate

active

07410891

ABSTRACT:
A partially manufactured semiconductor device includes a semiconductor substrate. The device includes a first oxide layer formed on the substrate, with a mask placed over the oxide-covered substrate, a plurality of first trenches and at least one second trench etched through the oxide layer forming mesas. The at least one second trench is deeper and wider than each of the first trenches. The device includes a second oxide layer that is disposed over an area of mesas and the plurality of first trenches. The device includes a layer of masking material that is deposited over a an area of an edge termination region adjacent to an active region. The area of mesas and first trenches not covered by the masking layer is etched to remove the oxidant seal. The device includes an overhang area that is formed by a wet process etch.

REFERENCES:
patent: 4158206 (1979-06-01), Neilson
patent: 4415371 (1983-11-01), Soclof
patent: 4756793 (1988-07-01), Peek
patent: 4866004 (1989-09-01), Fukushima
patent: 4895810 (1990-01-01), Meyer et al.
patent: 5019522 (1991-05-01), Meyer et al.
patent: 5045903 (1991-09-01), Meyer et al.
patent: 5216275 (1993-06-01), Chen
patent: 5278438 (1994-01-01), Kim et al.
patent: 5366914 (1994-11-01), Takahashi et al.
patent: 5435888 (1995-07-01), Kalnitsky et al.
patent: 5472888 (1995-12-01), Kinzer
patent: 5498564 (1996-03-01), Geissler et al.
patent: 5506421 (1996-04-01), Palmour
patent: 5598018 (1997-01-01), Lidow et al.
patent: 5668018 (1997-09-01), Cronin et al.
patent: 5742087 (1998-04-01), Lidow et al.
patent: 5744994 (1998-04-01), Williams
patent: 5786619 (1998-07-01), Kinzer
patent: 5902127 (1999-05-01), Park
patent: 5929690 (1999-07-01), Williams
patent: 5939754 (1999-08-01), Hoshi
patent: 6081009 (2000-06-01), Neilson
patent: 6184555 (2001-02-01), Tihanyi et al.
patent: 6190970 (2001-02-01), Liao et al.
patent: 6198127 (2001-03-01), Kocon
patent: 6214698 (2001-04-01), Liaw et al.
patent: 6222229 (2001-04-01), Herbert et al.
patent: 6239463 (2001-05-01), Williams et al.
patent: 6265281 (2001-07-01), Reinberg
patent: 6291856 (2001-09-01), Miyasaka et al.
patent: 6300171 (2001-10-01), Frisina
patent: 6307246 (2001-10-01), Nitta et al.
patent: 6359309 (2002-03-01), Liao et al.
patent: 6362505 (2002-03-01), Tihanyi
patent: 6391723 (2002-05-01), Frisina
patent: 6410958 (2002-06-01), Usi et al.
patent: 6452230 (2002-09-01), Boden, Jr.
patent: 6458647 (2002-10-01), Tews et al.
patent: 6459142 (2002-10-01), Tihanyi
patent: 6465325 (2002-10-01), Ridley et al.
patent: 6495421 (2002-12-01), Luo
patent: 6501130 (2002-12-01), Disney
patent: 6501146 (2002-12-01), Harada
patent: 6504230 (2003-01-01), Deboy et al.
patent: 6509220 (2003-01-01), Disney
patent: 6583010 (2003-06-01), Mo
patent: 6635906 (2003-10-01), Chen
patent: 6756303 (2004-06-01), Erb et al.
patent: 2002/0070418 (2002-06-01), Kinzer et al.
patent: 2005/0112839 (2005-05-01), Wu
patent: 2006/0166419 (2006-07-01), Shimoyama et al.
patent: 05343680 (1993-12-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing a superjunction device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a superjunction device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a superjunction device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4018750