Method of manufacturing a SOI structure having a SiGe layer...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

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C257SE21122, C257SE21570, C438S406000, C438S409000, C438S455000, C438S459000, C438S479000

Reexamination Certificate

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07947572

ABSTRACT:
A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to one manufacturing method, a first SiGe layer, a silicon layer, and a second SiGe layer are epitaxially grown in sequence over a first substrate, and then an insulating layer is formed on the second SiGe layer. Then, impurity ions are implanted into a predetermined location of the first substrate underlying the first SiGe layer to form an impurity implantation region. A second substrate is bonded to the insulating layer on the first substrate. After the first substrate is separated along the impurity implantation region and removed, the first SiGe layer remaining on the surface of the separated region is removed so that the surface of the silicon layer may be exposed.

REFERENCES:
patent: 5218213 (1993-06-01), Gaul et al.
patent: 5352912 (1994-10-01), Crabbe et al.
patent: 5371037 (1994-12-01), Yonehara
patent: 5658809 (1997-08-01), Nakashima et al.
patent: 5767549 (1998-06-01), Chen et al.
patent: 5882987 (1999-03-01), Srikrishnan
patent: 5963817 (1999-10-01), Chu et al.
patent: 6054363 (2000-04-01), Sakaguchi et al.
patent: 6660606 (2003-12-01), Miyabayashi et al.
patent: 7033913 (2006-04-01), Usuda et al.
patent: 2003/0089950 (2003-05-01), Kuech et al.
patent: 2003/0230778 (2003-12-01), Park et al.
patent: 2005/0230676 (2005-10-01), Bae et al.

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