Method of manufacturing a single transistor non-volatile, electr

Details Method of manufacturing a single transistor non-volatile, electr Method of manufacturing a single transistor non-volatile, electr

1990-01-22

1991-09-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 41, 437913, 437 52, 357 235, 357 2315, 365182, 365185, H01L 21265

Patent

active

050454889

ABSTRACT:
A methd of making an electrically programmable and erasable memory device having a re-crystallized floating gate is disclosed. A substrate is first defined. A first layer of dielectric material is grown over the substrate. A layer of polysilicon or amorphous silicon is then deposited over the first layer. The layer of silicon is covered with a protective material and is annealed to form recrystallized silicon. A portion of the protective material is removed to define a floating gate region. Making oxide is grown on the floating gate region. The remainder of the protective material and the recrystallized silicon thereunder is removed. A second layer of dielectric material is formed over the floating gate and over the substrate, immediately adjacent to the floating gate. A control gate is patterned and formed. Source and drain regions are then defined in the substrate.

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