Method of manufacturing a single crystal silicon rod

Details Method of manufacturing a single crystal silicon rod Method of manufacturing a single crystal silicon rod

1981-06-24

1983-03-29

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG73, C30B 1520

Patent

active

043782698

ABSTRACT:
A method of manufacturing a single crystal silicon rod by the pulling method which is characterized in that the intracrystal temperature of the growing single crystal silicon rod is reduced from 900.degree. to 500.degree. C. in less than 4 hours.

REFERENCES:
patent: 3192082 (1965-06-01), Tomono et al.
patent: 3441385 (1969-04-01), Schmidt
patent: 4140570 (1979-02-01), Voltmer et al.

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