Method of manufacturing a single crystal of compound semiconduct

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156602, 15661641, 156DIG83, 422109, 422248, C30B 2102

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active

049043366

ABSTRACT:
An apparatus for manufacturing a single crystal of compound semiconductor consisting of Ga and As comprises a crucible storing Ga and having a seed crystal arranged at a lower end portion thereof a gas material susceptor, arranged below the crucible, for storing As, the gas material susceptor and the crucible being arranged in a growth susceptor to be capable of communicating with each other, a main heater for heating and melting Ga in the crucible and for cooling the melt Ga from a lower portion thereof to grow a single crystal, a sub heater for heating and evaporating As in the gas material susceptor and allowing the evaporated As to react with the melt Ga in the said crucible, and a magnetic field applying coil for applying a vertical magnetic field in the melt Ga and As in the crucible so that a surface of the melt in the crucible which is grown to a single crystal is lower in temperature at a central portion thereof than a peripheral portion thereof in a radial direction and at the same time projects upward.

REFERENCES:
patent: 2890940 (1959-06-01), Pfann
patent: 4404172 (1983-09-01), Gault
patent: 4521272 (1985-06-01), Gault
patent: 4592895 (1986-06-01), Matsutani et al.
Journal of Crystal Growth 74 (1986) 491-506, North Holland, Amsterdam, "A Novel Application of the Vertical Gradient Freeze Method to the Growth of High Quality III-V Crystals"; Gault et al.
Journal of Crystal Growth 83 (1987) 174-183, North Holland, Amsterdam, "Vertical Gradient Freeze Growth of Large Diameter, Low Defect Density Indium Phosphide"; Monberg et al.

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