Method of manufacturing a silicon/silicon germanium heterojuncti

Details Method of manufacturing a silicon/silicon germanium heterojuncti Method of manufacturing a silicon/silicon germanium heterojuncti

1997-12-09

1999-04-27

Bowers, Charles

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

H01L 21331, H01L 218222

Patent

active

058973591

ABSTRACT:
There is disclosed a method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor having a good conformity and an improved speed characteristic, which includes the steps of sequentially laminating an underlying nitride film, an oxide film, a polycrystalline silicon film and an upper nitride on a semiconductor substrate on which devices are separated and a collector is formed; sequentially etching said upper nitride film and said polycrystalline silicon film using the emitter as a mask, and then forming a side wall nitride film; selectively wet-etching said oxide film to form a side base linker opening; burying said base linker opening with a polycrystalline silicon; oxidizing said polycrystalline silicon film buried into said base linker opening and then removing said oxide film by means of the selective wet-etch process; removing said upper nitride and then forming a silicon/silicon germanium film as a base film on the exposed thereof; and forming an emitter said silicon/silicon germanium film.

REFERENCES:
patent: 5340753 (1994-08-01), Bassous et al.
patent: 5432104 (1995-07-01), Sato
patent: 5583059 (1996-12-01), Burghartz
patent: 5696007 (1997-12-01), Ryum et al.

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