Method of manufacturing a silicide layer

Details Method of manufacturing a silicide layer Method of manufacturing a silicide layer

2007-11-13

2007-11-13

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S756000, C438S682000, C257SE21229, C216S083000

Reexamination Certificate

active

11088984

ABSTRACT:
There is provided a method of manufacturing semiconductor device comprising removing an organic substance from a semiconductor surface having an oxide film thereon, the semiconductor surface being formed to have a line width of 50 nm or less; removing the oxide film from the semiconductor surface; drying the semiconductor surface without using an organic solvent; and forming a silicide layer on the semiconductor surface after drying the semiconductor surface.

REFERENCES:
patent: 6211055 (2001-04-01), Peng et al.
patent: 6492275 (2002-12-01), Riley et al.
patent: 6664196 (2003-12-01), Wada et al.
patent: 2005/0148197 (2005-07-01), Woods et al.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1: Process Teachnology, 1986 by Lattice press, pp. 564-565.

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