Method of manufacturing a shallow trench isolation structure for

Details Method of manufacturing a shallow trench isolation structure for Method of manufacturing a shallow trench isolation structure for

1997-08-22

2000-11-21

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430316, 430394, 216 17, 216 39, 438424, G03F 700

Patent

active

061500720

ABSTRACT:
A method for fabricating a shallow trench isolation structure involves several steps. The steps of an illustrative method include forming a first resist pattern on a substrate, etching the substrate to form a shallow trench therein using the first resist pattern as a mask, removing the first resist pattern from the substrate, depositing an oxide layer on the substrate including in the shallow trench, depositing a polish stop layer on the oxide layer, forming a second resist pattern on a portion of the polish stop layer substantially covering the shallow trench using the same mask as the mask for the first resist pattern, etching the polish stop layer, removing the second resist pattern leaving the portion of the polish stop layer substantially covering the shallow trench, polishing the oxide layer using the portion of the polish stop layer substantially covering the shallow trench as a polish stop, and removing the portion of the polish stop layer substantially covering the shallow trench.

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