Method of manufacturing a semiconductor wafer

Details Method of manufacturing a semiconductor wafer Method of manufacturing a semiconductor wafer

1998-11-19

2000-05-23

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438690, 438691, 438706, H01L 21302

Patent

active

060665653

ABSTRACT:
A sliced wafer 1a is obtained by cutting it off from a semiconductor ingot. The rear and front surfaces of the sliced wafer 1a are flattened by the first double side simultaneous grinding process so as to remove unevenness 12a. The ground rear and front surfaces of the sliced wafer 1a whose unevenness 12a has been removed are subject to the second double side simultaneous grinding process. The flattened back side surface of the sliced wafer 1b is sucked so as to chamfer the outer peripheral portion 1b of the sliced wafer 1b. Then, the surface of the chamfered wafer 1c is etched.

REFERENCES:
patent: 5514025 (1996-05-01), Hasegawa et al.
patent: 5769695 (1998-06-01), Katayama
patent: 5942445 (1999-08-01), Kato et al.

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