Method of manufacturing a semiconductor wafer

Details Method of manufacturing a semiconductor wafer Method of manufacturing a semiconductor wafer

1997-09-30

1999-05-18

Bowers, Charles

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438691, 438692, H01L21/00;21/02

Patent

active

059045680

ABSTRACT:
A process for precisely and efficiently manufacturing a semiconductor wafer is provided, which can prevent contamination by metals inside silicon crystals and remove the factors that degrade the GOI produced during the wafer manufacturing steps. A sliced and chamfered semiconductor wafer is subjected to lapping. The lapped semiconductor wafer is then etched, and thus the working strains produced by lapping is removed. The two sides of the etched semiconductor wafer are then primary polished with a dual-surface polishing machine. The primary polished semiconductor wafer is etched with an aqueous solution of 1% NaOH solution. The weak alkali etched semiconductor wafer is then mirror processed by a finish polishing. The finish polished semiconductor wafer is washed with an SC-1 solution.

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Metals Handbook American Society for Metals pp. 35-2 and 35-25, 1985.

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