Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Patent
1997-07-29
1999-10-12
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
438287, 438261, 438775, H01L 2120
Patent
active
059666242
ABSTRACT:
A structure for semiconductors having a crystalline layer includes a first silicon-containing dielectric film formed on a semiconductor substrate. A crystalline layer is formed on the first dielectric film by hydrogen annealing the surface of the first dielectric layer to form a layer of silicon atoms. The silicon atoms are reacted with a gas containing nitrogen or annealed in the presence of an inert gas to form either a crystalline layer of silicon nitride or a crystalline layer of silicon, respectively. A second dielectric film can be formed on the crystalline layer. In particularly useful embodiments, the crystalline layer of silicon or silicon nitride is three to twenty monolayers. The silicon nitride structure described herein forms an improved dielectric structure reducing the thickness of dielectric layer and improving resistance to electrical breakdown. The silicon structure described herein forms a semiconductor layer on a dielectric layer.
REFERENCES:
patent: 4219925 (1980-09-01), Heeren
patent: 4395438 (1983-07-01), Chiang
patent: 4692344 (1987-09-01), Kaganowicz et al.
patent: 4849259 (1989-07-01), Biro et al.
patent: 5234869 (1993-08-01), Mikata et al.
patent: 5254369 (1993-10-01), Arai et al.
patent: 5352487 (1994-10-01), Klinedinst et al.
patent: 5356825 (1994-10-01), Hozumi et al.
patent: 5376593 (1994-12-01), Sandhu et al.
patent: 5428244 (1995-06-01), Segawa et al.
patent: 5460992 (1995-10-01), Hasegawa
patent: 5464792 (1995-11-01), Tseng et al.
patent: 5504021 (1996-04-01), Hong et al.
patent: 5512518 (1996-04-01), Cho et al.
patent: 5882978 (1999-03-01), Srinivasan et al.
Nguyen Tuan H.
Paschburg Donald B.
Siemens Aktiengesellschaft
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