Method of manufacturing a semiconductor pressure sensor

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156633, 156645, 156651, 156657, 156662, 29 2535, 296211, 437228, 437233, 437901, 437921, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

053207050

ABSTRACT:
A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which; at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the mail surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity. The semiconductor pressure sensor is featured in that at least one of the outer peripheral side surfaces of the first and the second semiconductor regions is formed inside of the outermost peripheral side surface of the isolation layer.

REFERENCES:
patent: 3941629 (1976-03-01), Jaffe
patent: 4314225 (1982-02-01), Tominaga et al.
patent: 4618397 (1986-10-01), Shimizu et al.
patent: 4672354 (1987-06-01), Kurtz et al.
patent: 4721938 (1988-06-01), Stevenson
patent: 4839708 (1989-06-01), Kano et al.
Transducers '87, "Ion Sensitive FET with a silicon-insulator Silicon Structure", (pp. 711-714).
IEEE Transaction on Electron Devices, "Integrated Signal Conditioning for Silicon Pressure Sensors", vol. ED-26, No. 12, Dec. 1979, (pp. 1906-1910).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a semiconductor pressure sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor pressure sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor pressure sensor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1246361

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.