Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-10-17
2006-10-17
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S305000, C438S163000, C438S162000, C438S530000, C257SE21122
Reexamination Certificate
active
07122452
ABSTRACT:
A method of producing a semiconductor device on a silicon on insulator (SOI) substrate is disclosed. In one aspect, the method comprises providing a device with a monocrystalline semiconductor layer on an insulating layer; providing a mask on the semiconductor layer to provide first shielded portions and first unshielded portions, amorphizing the first unshielded portions to yield first amorphized portions of the monocrystalline semiconductor layer, implanting a first dopant in the first amorphized portions, applying a first solid phase epitaxial regrowth action to the semiconductor device while using the first shielded portions as monocrystalline seeds.
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Interuniversitair Microelektronica Centrum (IMEC vzw)
Knobbe Martens Olson & Bear LLP
Koninklijke Philips Electronics
Sarkar Asok K.
Yevsikov Victor V.
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